TC2623 ref. : dsTC26237003 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cedex france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 12ghz super low noise hemt algaas/gaas field effect transistor description the TC2623 is a x/ku band schottky barrier high electron mobility transistor. this device is based on a 0.25m mushroom aluminium gate associated with an hemt active layer and passivated with a si3n4 layer. it is mounted in a 70mils hermetic ceramic- metal package, easy to match at x band. it is available in the bmh204 package and in chip form. main features 0.3db minimum noise figure @ 5ghz 0.65db minimum noise figure @ 12ghz 14db associated gain @ 5ghz 10.5db associated gain @ 12ghz 1 2 3 4 1 : gate 2 : source 3 : drain 4 : source main characteristics tamb = +25c symbol parameter min typ max unit idss saturated drain current 10 30 60 ma nfmin minimum noise figure 0.3 0.55 db ga associated gain 13 14 db esd protections: electrostatic discharge sensitive device observe handling precautions! free datasheet http://www.0pdf.com
TC2623 12ghz super low noise hemt ref. : dsTC26237003 2 /6 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 electrical characteristics tamb = +25c symbol parameter test conditions min typ max unit idss saturated drain current vds = 1v vgs = 0v 10 30 60 ma vp pinch off voltage vds = 1v ids = idss/100 -1.0 -0.6 -0.2 v gm transconductance vds = 1v ids = 10ma 35 45 ms igsd gate to source/drain leakage current vgsd = -3v 30 a dynamic characteristics symbol parameter test conditions min max unit nf min minimum noise figure f= 5ghz 0.55 db vds=2v f= 12ghz 0.85 db ga associated gain ids=10ma f= 5ghz 13 db f= 12ghz 9.5 db absolute maximum ratings (1) tamb = +25c symbol parameter values unit vds drain to source voltage 3 v vgs gate to source voltage -3 v pt total power dissipation 60 mw tch operating channel temperature +175 c tstg storage temperature range -65 to +175 c (1) operation of this device above any one of these parameters may cause permanent damage free datasheet http://www.0pdf.com
12ghz super low noise hemt TC2623 ref. : dsTC26237003 3 /6 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 typical scattering parameters tamb = +25c "s" parameters vds = 2v, ids = 26ma freq. mhz s11 db s11 / / s21 db s21 / / s12 db s12 / / s22 db s22 / / 1000 0.19 23.4 16.40 159.3 -34.07 75.2 -5.34 -18.6 2000 0.65 -44.9 15.77 140.8 -28.57 62.9 -5.72 -36.1 3000 -1.14 -63.8 14.94 124.3 -26.03 51.1 -5.98 -51.2 4000 -1.66 -79.5 14.06 109.6 -24.36 43.0 -6.32 -63.2 5000 -2.21 -93.1 13.27 96.9 -23.37 35.0 -6.54 -75.0 6000 -2.70 -106.2 12.47 84.4 -22.68 28.8 -6.58 -83.1 7000 -3.25 -115.6 11.74 74.0 -22.15 23.1 -6.94 -92.2 8000 -3.48 -125.5 11.27 63.8 -21.55 19.1 -6.60 -98.9 9000 -4.16 -135.8 10.74 53.1 -21.28 12.6 -6.93 -106.5 10000 -4.42 -140.5 10.40 44.9 -20.71 10.9 -6.52 -110.1 11000 -5.33 -154.4 10.56 33.7 -19.88 2.8 -7.20 -119.6 12000 -6.32 -168.4 10.20 22.2 -19.64 -2.6 -7.38 -128.4 13000 -6.87 179.0 10.32 12.1 -18.89 -9.9 -8.33 -137.1 14000 -8.28 153.4 10.24 -2.1 -18.43 -19.5 -8.94 -157.4 15000 -8.49 130.8 10.06 -14.4 -18.26 -28.4 -9.87 -167.6 16000 -8.53 102.5 9.73 -29.4 -17.75 -39.8 -11.74 166.8 17000 -7..64 75.6 9.48 -43.1 -18.01 -51.8 -12.20 138.1 18000 -6.91 55.2 8.77 -58.5 -17.73 -62.4 -12.32 114.4 19000 -6.44 41.4 8.18 -70.5 -18.12 -76.0 -10.96 88.9 20000 -6.19 25.02 7.71 -84.5 -17.97 -84.8 -10.85 86.4 typical results tamb = +25c typical noise parameters at vds = 2v, ids = 10ma, including 0.1nh gate and drain series inductance frequency nf min ga g g opt rn mhz db db mod. ang-deg. 2000 0.09 23.9 0.912 15.4 11.00 4000 0.18 20.4 0.835 30.8 10.60 6000 0.27 18.1 0.770 46.1 10.10 8000 0.36 16.4 0.720 61.4 9.30 10000 0.45 15.1 0.680 76.4 8.40 12000 0.54 13.9 0.650 91.1 7.40 14000 0.63 13.0 0.635 105.0 6.35 16000 0.71 12.1 0.625 119.0 5.25 18000 0.80 11.3 0.625 131.0 4.20 free datasheet http://www.0pdf.com
TC2623 12ghz super low noise hemt ref. : dsTC26237003 4 /6 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 typical parameters tamb = +25c nf and ga vs frequency 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 2 4 6 8 10 12 14 16 18 frequency (ghz) noise figure (db) 0 5 10 15 20 25 associated gain (db) nf ga vds = 2v, ids = 10ma k and msg vs frequency 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 3 5 7 9 11 13 15 17 19 frequency (ghz) stability factor 0 5 10 15 20 25 30 maximum stable gain (db) vds = 2v, ids = 26ma free datasheet http://www.0pdf.com
12ghz super low noise hemt TC2623 ref. : dsTC26237003 5 /6 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 bmh204 package 4 3 2 1 0 , 6 1 , 0 9 0 , 6 1 , 7 8 1 , 0 2 0,05 5 , 4 1 1 , 7 8 5 , 4 1 1 , 3 m a x 0 , 5 5 , 4 1 0 , 5 1 0,05 5 , 4 1 0,1 +0,05 -0,03 dimensions in mm 1: gate 2: source 3: drain 4: source free datasheet http://www.0pdf.com
TC2623 12ghz super low noise hemt ref. : dsTC26237003 6 /6 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 ordering information package :TC2623-a3x/00 chip form : ec2623-99x/00 (see data sheet ec2623 for more informations) information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s. free datasheet http://www.0pdf.com
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